Gallium Arsenide (GaAs) Wafer Zn-Doped 2” 3”

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Gallium Arsenide (GaAs) Wafer Zn-Doped 2” 3”
Posting date : Oct 18, 2013
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83-
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Gallium Arsenide (GaAs) Wafer Zn-Doped 2” 3” Conduct Type SC/P, EPI-Ready Diameter Ø50.8± 0.2, 76.2 ± 0.2mm Orientation (100) 2°±0.5° to (110);α=45° Thickness 350±25um, 625±25um Primary Flat EJ [0 -1 -1] Length 16+/-2m, 22+/-2 mm Secondary Flat EJ [0 1 -1] Length 8+/-1mm,16+/-2mm Carrier Concentration 2-8x1018cm-3for 2”, 3-50x1018cm-3 for 3” Resistivity Standard Mobility Standard EPD ≤ 2000/cm2 for 2”, ≤ 10,000/cm2 for 3” Surface P/E , TTV≤15µm Single wafer packing, carton box outside

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