Gallium Arsenide (GaAs) Wafer Un-doped Semi-insulating 2” 3”

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Gallium Arsenide (GaAs) Wafer Un-doped Semi-insulating 2” 3”
Posting date : Oct 18, 2013
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83-
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Gallium Arsenide (GaAs) Wafer Un-doped Semi-insulating 2” 3” Conduct Type N, VGF growth, EPI-Ready Diameter 50.8±0.2 mm, 76.2±0.3 mm Thickness350±25µm, 625+/-25um Orientation (100)0±0.50 Primary Flat EJ [0-1-1] ±0.50 Length16±1 mm, 22±2mm Secondary Flat EJ [0 -1 1] ±0.50 length7±1mm, 12±2mm Resistivity >1×107 Ohm.cm Mobility>5000 cm2/v.s EPD<10000 /cm2 TTV/BOW/Warp ≤10µm for 2”, ≤15µm for 3” Edge0.25 mmR, Surface P/P Single wafer packing, carton box outside

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