Dia 100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device

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4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED Advantagement Low lattice mismatch High thermal conductivity Low power consumption Excellent transient characteristics High band gap Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES - - - - Product Name: | Silicon carbide (SiC) crystal substrate | Product Description: | 2-6inch | Technical parameters: | - - - - Cell structure | Hexagonal | Lattice constant | a = 3.08 c = 15.08 | Priorities | ABCACB (6H) | Growth method | MOCVD | Direction | Growth axis or Partial (0001) 3.5 | Polishing | Si surface polishing | Bandgap | 2.93 eV (indirect) | Conductivity type | N or seimi ,high purity | Resistivity | 0.076 ohm-cm | Permittivity | e (11) = e (22) = 9.66 e (33) = 10.33 | Thermal conductivity @ 300K | 5 W / cm. K | Hardness | 9.2 Mohs | - - - - | Specifications: | 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2" x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw, Ra <10A | Standard Packaging: | 1000 clean room, 100 clean bag or single box packaging | - - - - 2. substrates size of standard - - - - 4 inch diameter Silicon Carbide (SiC) Substrate Specification | Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | Diameter | 100.0 mm0.5 mm | Thickness | 350 m25m (200-500um thickness also is ok) | Wafer Orientation | Off axis : 4.0 toward <1120> 0.5 for 4H-N/4H-SI On axis : <0001>0.5 for 6H-N/6H-SI/4H-N/4H-SI | Micropipe Density | 1 cm-2 | 5 cm-2 | 15 cm-2 | 50 cm-2 | Resistivity | 4H-N | 0.015~0.028 cm | 6H-N | 0.02~0.1 cm | 4/6H-SI | 1E5 cm | Primary Flat and length | {10-10}5.0 ,32.5 mm2.0 mm | Secondary Flat Length | 18.0mm2.0 mm | Secondary Flat Orientation | Silicon face up: 90 CW. from Prime flat 5.0 | Edge exclusion | 3 mm | TTV/Bow /Warp | 15m /25m /40m | Roughness | Polish Ra1 nm ,CMP Ra0.5 nm | Cracks by high intensity light | None | 1 allowed, 2 mm | Cumulative length 10mm, single length2mm | Hex Plates by high intensity light | Cumulative area 1% | Cumulative area 1% | Cumulative area 3% | Polytype Areas by high intensity light | None | Cumulative area 2% | Cumulative area 5% | Scratches by high intensity light | 3 scratches to 1wafer diameter cumulative length | 5 scratches to 1wafer diameter cumulative length | 5 scratches to 1wafer diameter cumulative length | edge chip | None | 3 allowed, 0.5 mm each | 5 allowed, 1 mm each | Contamination by high intensity light | None | - - - - Sic wafer ingots 2-6inch and other customized size also can be provided. 3.Pictures of delivery Products before Delivery Package

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SHANGHAI FAMOUS TRADE CO.,LTD

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