5SHY4045L0006 3BHB030310R0001
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China [CN] | brand | model | QQ email | Personal official website |
| ABB | 5SHY4045L0006 3BHB030310R0001 | 2797820256@qq.com | https://www.kniocauto.com/ |
| weight | Specifications | Telephone | |
| 10kg | 15cm | +86 18030177759 |
As mentioned earlier an IGBT is a fusion between a BJT and MOSFET. The symbol of the IGBT also represents the same, as you can see the input side represents a MOSFET with a Gate terminal and the output side represents a BJT with Collector and Emitter. The Collector and the Emitter are the conduction terminals and the gate is the control terminal with which the switching operation is controlled.
IGBT can be constructed with the equivalent circuit that consists of two transistors and MOSFET, as the IGBT posses the output of the below combination of the PNP transistor, NPN transistor, and MOSFET. IGBT combines the low saturation voltage of a transistor with the high input impedance and switching speed of a MOSFET. The outcome obtained from this combination delivers the output switching and conduction characteristics of a bipolar transistor, but the voltage is controlled like a MOSFET.
Since IGBT is the combination of MOSFET and BJT they are also called by different names. The different names of IGBT are Insulated Gate Transistor( IGT), Metal Oxide Insulated Gate Transistor (MOSIGT), Gain Modulated Field Effect Transistor (GEMFET), Conductively Modulated Field Effect Transistor (COMFET).5SHY4045L0004 5SHY4045L0001 3BHB018162R0001 3BHE009681R0101 GVC750BE101 5SHY35L4520 5SXE10-0181 AC10272001R0101 5SHY35L4520 AC10272001R0101/5SXE10-0181 5SHY35L4512
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