5SHY4045L0006 3BHB030310R0001

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Product
5SHY4045L0006 3BHB030310R0001
Posting date : Sep 22, 2022
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Free Member Scince Sep 08, 2022
FOB Price
4454$
Min. Order Quantity
1
Supply Abillity
Global
Port
Shenzhen
Payment Terms
Full payment
Package
federal
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魏魏先生
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Product Detail
Company Info
 
Quick Detail
Place of Origin
China [CN]
Brand Name
5SHY4045L0006 3BHB030310R0001
Model Number
5SHY4045L0006 3BHB030310R0001
HS-CODE
3904-22
Package & Delivery Lead Time
Package
federal
Delivery Lead Time
3-4day
Detailed Description
brandmodelQQ emailPersonal official website
ABB5SHY4045L0006 3BHB030310R00012797820256@qq.comhttps://www.kniocauto.com/
weightSpecificationsTelephone
10kg15cm+86 18030177759
5SHY4045L0006 3BHB030310R00015SHY4045L0006 3BHB030310R00015SHY4045L0006 3BHB030310R00015SHY4045L0006 3BHB030310R00015SHY4045L0006 3BHB030310R00015SHY4045L0006 3BHB030310R00015SHY4045L0006 3BHB030310R00015SHY4045L0006 3BHB030310R0001IGBT is the short form of Insulated Gate Bipolar Transistor. It is a three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patters with pulse width modulation (PWM). The typical symbol of IGBT  along with its image is shown below.

 IGBT Symbol

 

As mentioned earlier an IGBT is a fusion between a BJT and MOSFET.  The symbol of the IGBT also represents the same, as you can see the input side represents a MOSFET with a Gate terminal and the output side represents a BJT with Collector and Emitter. The Collector and the Emitter are the conduction terminals and the gate is the control terminal with which the switching operation is controlled.

 

Internal Structure of IGBT

IGBT can be constructed with the equivalent circuit that consists of two transistors and MOSFET, as the IGBT posses the output of the below combination of the PNP transistorNPN transistor, and MOSFET. IGBT combines the low saturation voltage of a transistor with the high input impedance and switching speed of a MOSFET. The outcome obtained from this combination delivers the output switching and conduction characteristics of a bipolar transistor, but the voltage is controlled like a MOSFET.

IGBT Internal Structure

 

Since IGBT is the combination of MOSFET and BJT they are also called by different names. The different names of IGBT are  Insulated Gate Transistor( IGT), Metal Oxide Insulated Gate Transistor (MOSIGT), Gain Modulated Field Effect Transistor (GEMFET), Conductively Modulated Field Effect Transistor (COMFET).5SHY4045L0004 5SHY4045L0001 3BHB018162R0001 3BHE009681R0101 GVC750BE101 5SHY35L4520 5SXE10-0181 AC10272001R0101 5SHY35L4520 AC10272001R0101/5SXE10-0181 5SHY35L4512

brand model QQ email Personal official website ABB 5SHY4045L0006 3BHB030310R0001 2797820256@qq.com https://www.kniocauto.com/ weight Specifications Telephone 10kg 15cm +86 18030177759

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